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SI3529DV-T1-GE3

SI3529DV-T1-GE3

MOSFET N/P-CH 40V 2.5A 6-TSOP

SI3529DV-T1-GE3

SI3529DV-T1-GE3

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Part No :

SI3529DV-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N/P-CH 40V 2.5A 6-TSOP
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
357835 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 27 - Dec 31 2024
PDF
SI3529DV-T1-GE3 PDF
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)
Part Status:Obsolete
FET Type:N and P-Channel
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):40V
Current - Continuous Drain (Id) @ 25°C:2.5A, 1.95A
Rds On (Max) @ Id, Vgs:125mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:205pF @ 20V
Power - Max:1.4W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SOT-23-6 Thin, TSOT-23-6
Supplier Device Package:6-TSOP
SI3529DV-T1-GE3 is available at GangBo-ic.com, Please review product page below for detailed information, including SI3529DV-T1-GE3 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for SI3529DV-T1-GE3 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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