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SI1912EDH-T1-E3

SI1912EDH-T1-E3

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SI1912EDH-T1-E3

SI1912EDH-T1-E3

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Part No :

SI1912EDH-T1-E3

Manufacturer
Vishay / Siliconix
Description
MOSFET 2N-CH 20V 1.13A SC70-6
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
717671 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 25 - Mar 01 2025
PDF
SI1912EDH-T1-E3 PDF
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Obsolete
FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:1.13A
Rds On (Max) @ Id, Vgs:280mOhm @ 1.13A, 4.5V
Vgs(th) (Max) @ Id:450mV @ 100µA (Min)
Gate Charge (Qg) (Max) @ Vgs:1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:-
Power - Max:570mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:SC-70-6 (SOT-363)
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