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IRF8910GPBF

IRF8910GPBF

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Part No :

IRF8910GPBF

Manufacturer
IR (Infineon Technologies)
Description
MOSFET 2N-CH 20V 10A 8-SO
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
227522 pieces
Shipped from
HK warehouse
Expected Shipping Date
Apr 16 - Apr 20 2025
PDF
IRF8910GPBF PDF
Type Description
Series:HEXFET®
Package:Tube
Part Status:Obsolete
FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:10A
Rds On (Max) @ Id, Vgs:13.4mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:2.55V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:960pF @ 10V
Power - Max:2W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SO
IRF8910GPBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRF8910GPBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRF8910GPBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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