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BSO615NGHUMA1

BSO615NGHUMA1

MOSFET 2N-CH 60V 2.6A 8SOIC

BSO615NGHUMA1

BSO615NGHUMA1

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Part No :

BSO615NGHUMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET 2N-CH 60V 2.6A 8SOIC
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
997499 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 18 - Nov 22 2024
PDF
BSO615NGHUMA1 PDF
Type Description
Series:SIPMOS®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Obsolete
FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):60V
Current - Continuous Drain (Id) @ 25°C:2.6A
Rds On (Max) @ Id, Vgs:150mOhm @ 2.6A, 4.5V
Vgs(th) (Max) @ Id:2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs:20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:380pF @ 25V
Power - Max:2W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:PG-DSO-8
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