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IPG20N06S4L14ATMA1

IPG20N06S4L14ATMA1

MOSFET 2N-CH 8TDSON

IPG20N06S4L14ATMA1

IPG20N06S4L14ATMA1

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Part No :

IPG20N06S4L14ATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET 2N-CH 8TDSON
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
517451 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 17 - Nov 21 2024
PDF
IPG20N06S4L14ATMA1 PDF
Type Description
Series:Automotive, AEC-Q101, OptiMOS™
Package:Tape & Reel (TR)
Part Status:Discontinued at Digi-Key
FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):60V
Current - Continuous Drain (Id) @ 25°C:20A
Rds On (Max) @ Id, Vgs:13.7mOhm @ 17A, 10V
Vgs(th) (Max) @ Id:2.2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs:39nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:2890pF @ 25V
Power - Max:50W
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-PowerVDFN
Supplier Device Package:PG-TDSON-8-4
IPG20N06S4L14ATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPG20N06S4L14ATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPG20N06S4L14ATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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