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SI7960DP-T1-GE3

SI7960DP-T1-GE3

MOSFET 2N-CH 60V 6.2A PPAK SO-8

SI7960DP-T1-GE3

SI7960DP-T1-GE3

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Part No :

SI7960DP-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET 2N-CH 60V 6.2A PPAK SO-8
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
757175 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 26 - Mar 02 2025
PDF
SI7960DP-T1-GE3 PDF
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Obsolete
FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):60V
Current - Continuous Drain (Id) @ 25°C:6.2A
Rds On (Max) @ Id, Vgs:21mOhm @ 9.7A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:75nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:-
Power - Max:1.4W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:PowerPAK® SO-8 Dual
Supplier Device Package:PowerPAK® SO-8 Dual
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