MOSFET 2N-CH 20V 4.7A 6UDFN
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 4.7A |
Rds On (Max) @ Id, Vgs: | 40mOhm @ 4.2A, 4.5V |
Vgs(th) (Max) @ Id: | 1.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 8V |
Input Capacitance (Ciss) (Max) @ Vds: | 713pF @ 10V |
Power - Max: | 1.4W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-UDFN Exposed Pad |
Supplier Device Package: | U-DFN2020-6 (Type B) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
AON3810Alpha and Omega Semiconductor, Inc. |
MOSFET 2N-CH 20V 8.5A 8-DFN |
|
NDS9957Sanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 60V 2.6A 8-SOIC |
|
SI6993DQ-T1-E3Vishay / Siliconix |
MOSFET 2P-CH 30V 3.6A 8TSSOP |
|
PHKD3NQ10T,518Nexperia |
MOSFET 2N-CH 100V 3A 8SOIC |
|
SI3588DV-T1-GE3Vishay / Siliconix |
MOSFET N/P-CH 20V 2.5A 6-TSOP |
|
IPI60R199CPRochester Electronics |
COOLMOS N-CHANNEL POWER MOSFET |
|
SIA913DJ-T1-GE3Vishay / Siliconix |
MOSFET 2P-CH 12V 4.5A SC70-6 |
|
SSM6N37CTD(TPL3)Toshiba Electronic Devices and Storage Corporation |
MOSFET 2N-CH 20V 0.25A CST6D |
|
MMDF2N02ER2Sanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 25V 3.6A 8-SOIC |
|
AO4821Alpha and Omega Semiconductor, Inc. |
MOSFET 2P-CH 12V 9A 8SOIC |
|
94-3449IR (Infineon Technologies) |
MOSFET 2P-CH 55V 3.4A 8-SOIC |
|
SH8KA4TB1ROHM Semiconductor |
MOSFET2 N-CH SOP8G |
|
FDW2520CSanyo Semiconductor/ON Semiconductor |
MOSFET N/P-CH 20V 6A/4.4A 8TSSOP |