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BSO612CVGHUMA1

BSO612CVGHUMA1

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BSO612CVGHUMA1

BSO612CVGHUMA1

Image is for reference, please contact us to get the real picture

Part No :

BSO612CVGHUMA1

Manufacturer
Rochester Electronics
Description
3A, 60V, 0.12OHM, 2-ELEMENT, N-
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
171317 pieces
Shipped from
HK warehouse
Expected Shipping Date
Apr 16 - Apr 20 2025
PDF
BSO612CVGHUMA1 PDF
Type Description
Series:SIPMOS®
Package:Bulk
Part Status:Active
FET Type:N and P-Channel
FET Feature:Standard
Drain to Source Voltage (Vdss):60V
Current - Continuous Drain (Id) @ 25°C:3A (Ta), 2A (Ta)
Rds On (Max) @ Id, Vgs:120mOhm @ 3A, 10V, 300mOhm @ 2A, 10V
Vgs(th) (Max) @ Id:4V @ 20µA, 4V @ 450µA
Gate Charge (Qg) (Max) @ Vgs:15.5nC, 16nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:340pF, 400pF @ 25V
Power - Max:2W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:PG-DSO-8
BSO612CVGHUMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including BSO612CVGHUMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for BSO612CVGHUMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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