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ECH8601M-TL-H

ECH8601M-TL-H

N-CHANNEL POWER MOSFET

ECH8601M-TL-H

ECH8601M-TL-H

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Part No :

ECH8601M-TL-H

Manufacturer
Rochester Electronics
Description
N-CHANNEL POWER MOSFET
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
12705 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 25 - Dec 29 2024
PDF
ECH8601M-TL-H PDF
Type Description
Series:-
Package:Bulk
Part Status:Obsolete
FET Type:2 N-Channel (Dual) Common Drain
FET Feature:Logic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss):24V
Current - Continuous Drain (Id) @ 25°C:8A (Ta)
Rds On (Max) @ Id, Vgs:23mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id:1.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:7.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:-
Power - Max:-
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SMD, Flat Lead
Supplier Device Package:8-ECH
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