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SI4909DY-T1-GE3

SI4909DY-T1-GE3

MOSFET 2P-CH 40V 8A 8SO

SI4909DY-T1-GE3

SI4909DY-T1-GE3

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Part No :

SI4909DY-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET 2P-CH 40V 8A 8SO
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
10555 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 16 - Nov 20 2024
PDF
SI4909DY-T1-GE3 PDF
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:2 P-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):40V
Current - Continuous Drain (Id) @ 25°C:8A
Rds On (Max) @ Id, Vgs:27mOhm @ 8A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:63nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:2000pF @ 20V
Power - Max:3.2W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SO
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