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TSM110NB04DCR RLG

TSM110NB04DCR RLG

DUAL N-CHANNEL POWER MOSFET 40V,

TSM110NB04DCR RLG

TSM110NB04DCR RLG

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Part No :

TSM110NB04DCR RLG

Manufacturer
TSC (Taiwan Semiconductor)
Description
DUAL N-CHANNEL POWER MOSFET 40V,
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
981198 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 15 - Nov 19 2024
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:2 N-Channel (Dual)
FET Feature:Standard
Drain to Source Voltage (Vdss):40V
Current - Continuous Drain (Id) @ 25°C:10A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs:11mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:1506pF @ 20V
Power - Max:2W (Ta), 48W (Tc)
Operating Temperature:-55°C ~ 155°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-PowerTDFN
Supplier Device Package:8-PDFN (5x6)
TSM110NB04DCR RLG is available at GangBo-ic.com, Please review product page below for detailed information, including TSM110NB04DCR RLG price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for TSM110NB04DCR RLG to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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