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BSC750N10NDGATMA1

BSC750N10NDGATMA1

PFET, 3.2A I(D), 100V, 0.075OHM,

BSC750N10NDGATMA1

BSC750N10NDGATMA1

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Part No :

BSC750N10NDGATMA1

Manufacturer
Rochester Electronics
Description
PFET, 3.2A I(D), 100V, 0.075OHM,
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
12624 pieces
Shipped from
HK warehouse
Expected Shipping Date
Sep 26 - Sep 30 2024
PDF
BSC750N10NDGATMA1 PDF
Type Description
Series:OptiMOS™
Package:Bulk
Part Status:Active
FET Type:2 N-Channel (Dual)
FET Feature:Standard
Drain to Source Voltage (Vdss):100V
Current - Continuous Drain (Id) @ 25°C:3.2A
Rds On (Max) @ Id, Vgs:75mOhm @ 13A, 10V
Vgs(th) (Max) @ Id:4V @ 12µA
Gate Charge (Qg) (Max) @ Vgs:11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:720pF @ 50V
Power - Max:26W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-PowerVDFN
Supplier Device Package:PG-TDSON-8-4
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