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MOSFET 2N-CH 150V 2.6A PPAK SO-8
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| Type | Description |
|---|---|
| Series: | TrenchFET® |
| Package: | Tape & Reel (TR)Cut Tape (CT) |
| Part Status: | Active |
| FET Type: | 2 N-Channel (Dual) |
| FET Feature: | Logic Level Gate |
| Drain to Source Voltage (Vdss): | 150V |
| Current - Continuous Drain (Id) @ 25°C: | 2.6A |
| Rds On (Max) @ Id, Vgs: | 105mOhm @ 4.1A, 10V |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 26nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds: | - |
| Power - Max: | 1.4W |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | PowerPAK® SO-8 Dual |
| Supplier Device Package: | PowerPAK® SO-8 Dual |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
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