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BSO615CGHUMA1

BSO615CGHUMA1

PFET, 3.1A I(D), 60V, 0.11OHM, 2

BSO615CGHUMA1

BSO615CGHUMA1

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Part No :

BSO615CGHUMA1

Manufacturer
Rochester Electronics
Description
PFET, 3.1A I(D), 60V, 0.11OHM, 2
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
16253 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
BSO615CGHUMA1 PDF
Type Description
Series:SIPMOS®
Package:Bulk
Part Status:Active
FET Type:N and P-Channel
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):60V
Current - Continuous Drain (Id) @ 25°C:3.1A (Ta), 2A (Ta)
Rds On (Max) @ Id, Vgs:110mOhm @ 3.1A, 10V, 300mOhm @ 2A, 10V
Vgs(th) (Max) @ Id:2V @ 20µA, 2V @ 450µA
Gate Charge (Qg) (Max) @ Vgs:22.5nC, 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:380pF, 460pF @ 25V
Power - Max:2W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:PG-DSO-8
BSO615CGHUMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including BSO615CGHUMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for BSO615CGHUMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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