Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 3.5A |
Rds On (Max) @ Id, Vgs: | 100mOhm @ 3.5A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 30nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 345pF @ 25V |
Power - Max: | 900mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SI1553CDL-T1-BE3Vishay / Siliconix |
MOSFET N/P-CH 20V SC70-6 |
|
SI6968BEDQ-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 20V 5.2A 8-TSSOP |
|
DN2625DK6-GRoving Networks / Microchip Technology |
MOSFET 2N-CH 250V 1.1A 8VDFN |
|
SQJ204EP-T1_GE3Vishay / Siliconix |
MOSFET DUAL N-CH 12V PPAK SO-8L |
|
MCH6630-TL-E-ONRochester Electronics |
N-CHANNEL MOSFET |
|
QH8MA3TCRROHM Semiconductor |
MOSFET N/P-CH 30V TSMT8 |
|
SI4936BDY-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 30V 6.9A 8-SOIC |
|
SI7900AEDN-T1-E3Vishay / Siliconix |
MOSFET 2N-CH 20V 6A 1212-8 |
|
IRFF9233Rochester Electronics |
AUTOMOTIVE HEXFET P-CHANNEL |
|
DMC1015UPD-13Zetex Semiconductors (Diodes Inc.) |
MOSFET 8V 24V POWERDI5060-8 |
|
FDS6912ASanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 30V 6A 8SOIC |
|
PHP225,118Rochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
|
ZXMHC6A07T8TAZetex Semiconductors (Diodes Inc.) |
MOSFET 2N/2P-CH 60V SM8 |