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SQS966ENW-T1_GE3

SQS966ENW-T1_GE3

Image is for reference, please contact us to get the real picture

Part No :

SQS966ENW-T1_GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CHAN 60V
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
10725 pieces
Shipped from
HK warehouse
Expected Shipping Date
Mar 27 - Mar 31 2025
PDF
SQS966ENW-T1_GE3 PDF
Type Description
Series:Automotive, AEC-Q101, TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:2 N-Channel (Dual)
FET Feature:Standard
Drain to Source Voltage (Vdss):60V
Current - Continuous Drain (Id) @ 25°C:6A (Tc)
Rds On (Max) @ Id, Vgs:36mOhm @ 1.25A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:8.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:572pF @ 25V
Power - Max:27.8W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount, Wettable Flank
Package / Case:PowerPAK® 1212-8W Dual
Supplier Device Package:PowerPAK® 1212-8W Dual
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