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IPG20N10S4L22ATMA1

IPG20N10S4L22ATMA1

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Part No :

IPG20N10S4L22ATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET 2N-CH 8TDSON
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
830883 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 15 - Nov 19 2024
PDF
IPG20N10S4L22ATMA1 PDF
Type Description
Series:Automotive, AEC-Q101, OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):100V
Current - Continuous Drain (Id) @ 25°C:20A
Rds On (Max) @ Id, Vgs:22mOhm @ 17A, 10V
Vgs(th) (Max) @ Id:2.1V @ 25µA
Gate Charge (Qg) (Max) @ Vgs:27nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:1755pF @ 25V
Power - Max:60W
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-PowerVDFN
Supplier Device Package:PG-TDSON-8-4
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