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DF11MR12W1M1B11BPSA1

DF11MR12W1M1B11BPSA1

MOSFET MOD 1200V 50A

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DF11MR12W1M1B11BPSA1

DF11MR12W1M1B11BPSA1

Image is for reference, please contact us to get the real picture

Part No :

DF11MR12W1M1B11BPSA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET MOD 1200V 50A
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
010801 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 15 - Nov 19 2024
Type Description
Series:CoolSiC™+
Package:Tray
Part Status:Active
FET Type:2 N-Channel (Dual)
FET Feature:Silicon Carbide (SiC)
Drain to Source Voltage (Vdss):1200V
Current - Continuous Drain (Id) @ 25°C:50A (Tj)
Rds On (Max) @ Id, Vgs:22.5mOhm @ 50A, 15V
Vgs(th) (Max) @ Id:5.55V @ 20mA
Gate Charge (Qg) (Max) @ Vgs:124nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds:3680pF @ 800V
Power - Max:20mW
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Package / Case:Module
Supplier Device Package:AG-EASY1BM-2
DF11MR12W1M1B11BPSA1 is available at GangBo-ic.com, Please review product page below for detailed information, including DF11MR12W1M1B11BPSA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for DF11MR12W1M1B11BPSA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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