MOSFET 4N-CH 1000V 18A SP4
Type | Description |
---|---|
Series: | POWER MOS 7® |
Package: | Bulk |
Part Status: | Active |
FET Type: | 4 N-Channel (H-Bridge) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 1000V (1kV) |
Current - Continuous Drain (Id) @ 25°C: | 18A |
Rds On (Max) @ Id, Vgs: | 540mOhm @ 9A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: | 154nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 4350pF @ 25V |
Power - Max: | 357W |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | SP4 |
Supplier Device Package: | SP4 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
NVMD6P02R2GSanyo Semiconductor/ON Semiconductor |
MOSFET 2P-CH 20V 4.8A 8SOIC |
|
MSCSM70AM07CT3AGRoving Networks / Microchip Technology |
PM-MOSFET-SIC-SBD~-SP3F |
|
2SJ645-TL-ERochester Electronics |
P-CHANNEL SILICON MOSFET |
|
SI4340CDY-T1-E3Vishay / Siliconix |
MOSFET 2N-CH 20V 14.1A 14-SOIC |
|
SI1539CDL-T1-BE3Vishay / Siliconix |
MOSFET N/P-CH 30V SOT363 |
|
MCCD2005-TPMicro Commercial Components (MCC) |
MOSFET 2N-CH 20V 8A |
|
SP8M24FRATBROHM Semiconductor |
4V DRIVE NCH+PCH MOSFET (CORRESP |
|
DMN2041LSD-13Zetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 20V 7.63A 8SO |
|
DMG6301UDW-7Zetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 25V 0.24A SOT363 |
|
DMN6066SSD-13Zetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 60V 3.3A 8SO |
|
IPG20N06S4L14ATMA2IR (Infineon Technologies) |
MOSFET 2N-CH 60V 20A 8TDSON |
|
FDW2503NZRochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
SP8J5FRATBROHM Semiconductor |
4V DRIVE PCH+PCH MOSFET (CORRESP |