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NTMD2C02R2G

NTMD2C02R2G

P-CHANNEL POWER MOSFET

NTMD2C02R2G

NTMD2C02R2G

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Part No :

NTMD2C02R2G

Manufacturer
Rochester Electronics
Description
P-CHANNEL POWER MOSFET
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
16455 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
NTMD2C02R2G PDF
Type Description
Series:-
Package:Bulk
Part Status:Obsolete
FET Type:N and P-Channel
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:5.2A, 3.4A
Rds On (Max) @ Id, Vgs:43mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id:1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:20nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:1100pF @ 10V
Power - Max:2W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SOIC
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