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NTMD2C02R2G

NTMD2C02R2G

P-CHANNEL POWER MOSFET

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NTMD2C02R2G

NTMD2C02R2G

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Part No :

NTMD2C02R2G

Manufacturer
Rochester Electronics
Description
P-CHANNEL POWER MOSFET
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
16455 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 13 - Nov 17 2024
PDF
NTMD2C02R2G PDF
Type Description
Series:-
Package:Bulk
Part Status:Obsolete
FET Type:N and P-Channel
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:5.2A, 3.4A
Rds On (Max) @ Id, Vgs:43mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id:1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:20nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:1100pF @ 10V
Power - Max:2W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SOIC
NTMD2C02R2G is available at GangBo-ic.com, Please review product page below for detailed information, including NTMD2C02R2G price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for NTMD2C02R2G to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

Office Hours : Mon-Fri, 9:00-18:30(GMT+8)

[email protected]

Phone: 00852-52612101

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