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FD6M043N08

FD6M043N08

N-CHANNEL POWER MOSFET

903-1MM

903-1MM

ROUND SPACER NYLON 1MM

FD6M043N08

FD6M043N08

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Part No :

FD6M043N08

Manufacturer
Rochester Electronics
Description
N-CHANNEL POWER MOSFET
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
11404 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 15 - Nov 19 2024
PDF
FD6M043N08 PDF
Type Description
Series:Power-SPM™
Package:Tube
Part Status:Obsolete
FET Type:2 N-Channel (Dual)
FET Feature:Standard
Drain to Source Voltage (Vdss):75V
Current - Continuous Drain (Id) @ 25°C:65A
Rds On (Max) @ Id, Vgs:4.3mOhm @ 40A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:148nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:6180pF @ 25V
Power - Max:-
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:EPM15
Supplier Device Package:EPM15
FD6M043N08 is available at GangBo-ic.com, Please review product page below for detailed information, including FD6M043N08 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FD6M043N08 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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