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SI4816BDY-T1-GE3

SI4816BDY-T1-GE3

MOSFET 2N-CH 30V 5.8A 8-SOIC

SI4816BDY-T1-GE3

SI4816BDY-T1-GE3

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Part No :

SI4816BDY-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET 2N-CH 30V 5.8A 8-SOIC
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
14250 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 13 - Nov 17 2024
PDF
SI4816BDY-T1-GE3 PDF
Type Description
Series:LITTLE FOOT®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:2 N-Channel (Half Bridge)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:5.8A, 8.2A
Rds On (Max) @ Id, Vgs:18.5mOhm @ 6.8A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:10nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds:-
Power - Max:1W, 1.25W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SO
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