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SQJB40EP-T1_GE3

SQJB40EP-T1_GE3

Image is for reference, please contact us to get the real picture

Part No :

SQJB40EP-T1_GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET 2 N-CH 40V POWERPAK SO8
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
720172 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 26 - Nov 30 2024
PDF
SQJB40EP-T1_GE3 PDF
Type Description
Series:Automotive, AEC-Q101, TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:2 N-Channel (Dual)
FET Feature:Standard
Drain to Source Voltage (Vdss):40V
Current - Continuous Drain (Id) @ 25°C:30A (Tc)
Rds On (Max) @ Id, Vgs:8mOhm @ 8A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:35nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:1900pF @ 25V
Power - Max:34W
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Package / Case:PowerPAK® SO-8 Dual
Supplier Device Package:PowerPAK® SO-8 Dual
SQJB40EP-T1_GE3 is available at GangBo-ic.com, Please review product page below for detailed information, including SQJB40EP-T1_GE3 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for SQJB40EP-T1_GE3 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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