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FDD3510H

FDD3510H

MOSFET N/P-CH 80V 4.3/2.8A TO252

LTM4644MPY

LTM4644MPY

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FDD3510H

FDD3510H

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Part No :

FDD3510H

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N/P-CH 80V 4.3/2.8A TO252
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
10474 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
PDF
FDD3510H PDF
Type Description
Series:PowerTrench®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N and P-Channel, Common Drain
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):80V
Current - Continuous Drain (Id) @ 25°C:4.3A, 2.8A
Rds On (Max) @ Id, Vgs:80mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:800pF @ 40V
Power - Max:1.3W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-252-5, DPak (4 Leads + Tab), TO-252AD
Supplier Device Package:TO-252-4L
FDD3510H is available at GangBo-ic.com, Please review product page below for detailed information, including FDD3510H price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FDD3510H to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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