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SIA938DJT-T1-GE3

SIA938DJT-T1-GE3

DUAL N-CHANNEL 20-V (D-S) MOSFET

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SIA938DJT-T1-GE3

SIA938DJT-T1-GE3

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Part No :

SIA938DJT-T1-GE3

Manufacturer
Vishay / Siliconix
Description
DUAL N-CHANNEL 20-V (D-S) MOSFET
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
15910 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 17 - Feb 21 2025
Type Description
Series:TrenchFET® Gen IV
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:2 N-Channel (Dual)
FET Feature:Standard
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:4.5A (Ta), 4.5A (Tc)
Rds On (Max) @ Id, Vgs:21.5mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:11.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:425pF @ 10V
Power - Max:1.9W (Ta), 7.8W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:PowerPAK® SC-70-6 Dual
Supplier Device Package:PowerPAK® SC-70-6 Dual
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