CAP CER 2.7UF 25V X7R 2220
MOSFET 2N-CH 20V 0.54A SOT-363
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 540mA |
Rds On (Max) @ Id, Vgs: | 550mOhm @ 540mA, 4.5V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | - |
Input Capacitance (Ciss) (Max) @ Vds: | 150pF @ 16V |
Power - Max: | 200mW |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | SOT-363 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
ALD110808ASCLAdvanced Linear Devices, Inc. |
MOSFET 4N-CH 10.6V 16SOIC |
|
IRF7304IR (Infineon Technologies) |
MOSFET 2P-CH 20V 4.3A 8-SOIC |
|
STL15DN4F5STMicroelectronics |
MOSFET 2N-CH 40V 60A POWERFLAT |
|
NTJD4401NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 20V 630MA SOT363 |
|
MSCSM70TAM10CTPAGRoving Networks / Microchip Technology |
PM-MOSFET-SIC-SBD~-SP6P |
|
SIZF906ADT-T1-GE3Vishay / Siliconix |
MOSFET DUAL N-CHAN 30V |
|
IRL6372TRPBFIR (Infineon Technologies) |
MOSFET 2N-CH 30V 8.1A 8SOIC |
|
SI7923DN-T1-E3Vishay / Siliconix |
MOSFET 2P-CH 30V 4.3A 1212-8 |
|
FDMS9600SSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 30V 12A/16A POWER56 |
|
NVMFD5C470NT1GSanyo Semiconductor/ON Semiconductor |
40V 11.7 MOHM T8 S08FL DU |
|
DMN2004DWKQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET 2NCH 20V 540MA SOT363 |
|
SSM6N36TU,LFToshiba Electronic Devices and Storage Corporation |
SMALL SIGNAL MOSFET N-CH X 2 VDS |
|
SQJ260EP-T1_GE3Vishay / Siliconix |
MOSFET 2 N-CH 60V POWERPAK SO8 |