N-CHANNEL POWER MOSFET
Type | Description |
---|---|
Series: | PowerTrench® |
Package: | Bulk |
Part Status: | Obsolete |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 9.6A |
Rds On (Max) @ Id, Vgs: | 14mOhm @ 9.6A, 4.5V |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 18nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: | 1240pF @ 10V |
Power - Max: | 2.1W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 18-WFBGA |
Supplier Device Package: | 18-BGA (2.5x4) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
FF11MR12W1M1PB11BPSA1IR (Infineon Technologies) |
MOSFET MODULE 1200V DUAL |
|
SI7997DP-T1-GE3Vishay / Siliconix |
MOSFET 2P-CH 30V 60A PPAK SO-8 |
|
SLA5212Sanken Electric Co., Ltd. |
MOSFET 3N/3P-CH 35V 8A 15-SIP |
|
CAS325M12HM2Wolfspeed - a Cree company |
MOSFET 2N-CH 1200V 444A MODULE |
|
SI4943BDY-T1-E3Vishay / Siliconix |
MOSFET 2P-CH 20V 6.3A 8-SOIC |
|
ALD1117PALAdvanced Linear Devices, Inc. |
MOSFET 2P-CH 10.6V 8DIP |
|
IPG20N10S4L35AATMA1IR (Infineon Technologies) |
MOSFET 2N-CH 100V 20A 8TDSON |
|
FDS6894ARochester Electronics |
N-CHANNEL POWER MOSFET |
|
NTLJD3119CTBGSanyo Semiconductor/ON Semiconductor |
MOSFET N/P-CH 20V 6WDFN |
|
SP8M51TB1ROHM Semiconductor |
MOSFET N/P-CH 100V 3A/2.5A SOP8 |
|
SI4808DY-T1-E3Vishay / Siliconix |
MOSFET 2N-CH 30V 5.7A 8SOIC |
|
FDB12N50FTMRochester Electronics |
MOSFET N-CH 500V 11.5A D2PAK |
|
QS6J11TRROHM Semiconductor |
MOSFET 2P-CH 12V 2A TSMT6 |