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IRF7902TRPBF

IRF7902TRPBF

HEXFET POWER MOSFET

1988118

1988118

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3650-05-82

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IRF7902TRPBF

IRF7902TRPBF

Image is for reference, please contact us to get the real picture

Part No :

IRF7902TRPBF

Manufacturer
Rochester Electronics
Description
HEXFET POWER MOSFET
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
12789 pieces
Shipped from
HK warehouse
Expected Shipping Date
Sep 22 - Sep 26 2024
PDF
IRF7902TRPBF PDF
Type Description
Series:HEXFET®
Package:Bulk
Part Status:Active
FET Type:2 N-Channel (Dual)
FET Feature:-
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:6.4A (Ta), 9.7A (Ta)
Rds On (Max) @ Id, Vgs:22.6mOhm @ 6.4A, 10V, 14.4mOhm @ 9.7A, 10V
Vgs(th) (Max) @ Id:2.25V @ 25µA
Gate Charge (Qg) (Max) @ Vgs:6.9nC, 9.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:580pF, 900pF @ 15V
Power - Max:1.4W (Ta), 2W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SO
IRF7902TRPBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRF7902TRPBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRF7902TRPBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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