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FDMD8900

FDMD8900

MOSFET 2N-CH 30V 19A/17A 12POWER

FDMD8900

FDMD8900

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Part No :

FDMD8900

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET 2N-CH 30V 19A/17A 12POWER
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
19000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 12 - Nov 16 2024
PDF
FDMD8900 PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:2 N-Channel (Dual)
FET Feature:Standard
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:19A, 17A
Rds On (Max) @ Id, Vgs:4mOhm @ 19A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:35nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:2605pF @ 15V
Power - Max:2.1W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:12-PowerWDFN
Supplier Device Package:12-Power3.3x5
FDMD8900 is available at GangBo-ic.com, Please review product page below for detailed information, including FDMD8900 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FDMD8900 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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