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SI5902BDC-T1-GE3

SI5902BDC-T1-GE3

MOSFET 2N-CH 30V 4A 1206-8

SI5902BDC-T1-GE3

SI5902BDC-T1-GE3

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Part No :

SI5902BDC-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET 2N-CH 30V 4A 1206-8
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
21385 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 26 - Nov 30 2024
PDF
SI5902BDC-T1-GE3 PDF
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:4A
Rds On (Max) @ Id, Vgs:65mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:220pF @ 15V
Power - Max:3.12W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SMD, Flat Lead
Supplier Device Package:1206-8 ChipFET™
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