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IPG20N06S2L65ATMA1

IPG20N06S2L65ATMA1

MOSFET 2N-CH 55V 20A TDSON-8-4

IPG20N06S2L65ATMA1

IPG20N06S2L65ATMA1

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Part No :

IPG20N06S2L65ATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET 2N-CH 55V 20A TDSON-8-4
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
15000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 27 - Dec 01 2024
Type Description
Series:*
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):55V
Current - Continuous Drain (Id) @ 25°C:20A
Rds On (Max) @ Id, Vgs:65mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:2V @ 14µA
Gate Charge (Qg) (Max) @ Vgs:12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:410pF @ 25V
Power - Max:43W
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-PowerVDFN
Supplier Device Package:PG-TDSON-8-4
IPG20N06S2L65ATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPG20N06S2L65ATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPG20N06S2L65ATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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