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NTJD4105CT1G

NTJD4105CT1G

MOSFET N/P-CH 20V/8V SOT-363

NTJD4105CT1G

NTJD4105CT1G

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Part No :

NTJD4105CT1G

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N/P-CH 20V/8V SOT-363
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
11205 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
PDF
NTJD4105CT1G PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N and P-Channel
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):20V, 8V
Current - Continuous Drain (Id) @ 25°C:630mA, 775mA
Rds On (Max) @ Id, Vgs:375mOhm @ 630mA, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:46pF @ 20V
Power - Max:270mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:SC-88/SC70-6/SOT-363
NTJD4105CT1G is available at GangBo-ic.com, Please review product page below for detailed information, including NTJD4105CT1G price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for NTJD4105CT1G to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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