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SI7956DP-T1-GE3

SI7956DP-T1-GE3

MOSFET 2N-CH 150V 2.6A PPAK SO-8

SI7956DP-T1-GE3

SI7956DP-T1-GE3

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Part No :

SI7956DP-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET 2N-CH 150V 2.6A PPAK SO-8
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
16935 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 14 - Nov 18 2024
PDF
SI7956DP-T1-GE3 PDF
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):150V
Current - Continuous Drain (Id) @ 25°C:2.6A
Rds On (Max) @ Id, Vgs:105mOhm @ 4.1A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:26nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:-
Power - Max:1.4W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:PowerPAK® SO-8 Dual
Supplier Device Package:PowerPAK® SO-8 Dual
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