MOSFET 2N-CH 30V 3.7A 6-TSOP
Type | Description |
---|---|
Series: | TrenchFET® |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 3.7A |
Rds On (Max) @ Id, Vgs: | 58mOhm @ 3.4A, 10V |
Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 6nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 235pF @ 15V |
Power - Max: | 1.4W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package: | 6-TSOP |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
MCH6626-TL-ERochester Electronics |
PCH+NCH 2.5V DRIVE SERIES |
|
DMC2041UFDB-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N/P-CH 20V 6UDFN |
|
BSM300D12P2E001ROHM Semiconductor |
MOSFET 2N-CH 1200V 300A |
|
SH8M24TB1ROHM Semiconductor |
MOSFET N/P-CH 45V 4.5A/3.5A SOP8 |
|
MCH6635-TL-E-ONRochester Electronics |
P-CHANNEL SILICON MOSFET |
|
DF23MR12W1M1PB11BPSA1IR (Infineon Technologies) |
MOSFET MODULE 1200V |
|
CSD86336Q3DTTexas Instruments |
SYNCHRONOUS BUCK NEXFET POWER BL |
|
TSM500P02DCQ RFGTSC (Taiwan Semiconductor) |
MOSFET 2 P-CH 20V 4.7A 6TDFN |
|
SI7980DP-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 20V 8A PPAK SO-8 |
|
TSM9926DCS RLGTSC (Taiwan Semiconductor) |
MOSFET 2 N-CHANNEL 20V 6A 8SOP |
|
DMN2005DLP4K-7Zetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 20V 0.3A 6-DFN |
|
SQJQ906EL-T1_GE3Vishay / Siliconix |
MOSFET 2 N-CH 40V POWERPAK8X8 |
|
TSM250NB06LDCR RLGTSC (Taiwan Semiconductor) |
DUAL N-CHANNEL POWER MOSFET 60V, |