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MHQ0402PSA0N3BT000

MHQ0402PSA0N3BT000

FIXED IND 0.3NH 600MA 150 MOHM

FDMD8530

FDMD8530

MOSFET 2N-CH 30V 35A

FDMD8530

FDMD8530

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Part No :

FDMD8530

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET 2N-CH 30V 35A
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
409340 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
PDF
FDMD8530 PDF
Type Description
Series:PowerTrench®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:2 N-Channel (Dual)
FET Feature:Standard
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:35A
Rds On (Max) @ Id, Vgs:1.25mOhm @ 35A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:149nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:10395pF @ 15V
Power - Max:2.2W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-PowerWDFN
Supplier Device Package:Power56
FDMD8530 is available at GangBo-ic.com, Please review product page below for detailed information, including FDMD8530 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FDMD8530 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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