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ALD1110EPAL

ALD1110EPAL

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Part No :

ALD1110EPAL

Manufacturer
Advanced Linear Devices, Inc.
Description
MOSFET 2N-CH 10V 8DIP
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
259325 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
PDF
ALD1110EPAL PDF
Type Description
Series:EPAD®
Package:Tube
Part Status:Active
FET Type:2 N-Channel (Dual) Matched Pair
FET Feature:Standard
Drain to Source Voltage (Vdss):10V
Current - Continuous Drain (Id) @ 25°C:-
Rds On (Max) @ Id, Vgs:500Ohm @ 5V
Vgs(th) (Max) @ Id:1.01V @ 1µA
Gate Charge (Qg) (Max) @ Vgs:-
Input Capacitance (Ciss) (Max) @ Vds:2.5pF @ 5V
Power - Max:600mW
Operating Temperature:0°C ~ 70°C (TJ)
Mounting Type:Through Hole
Package / Case:8-DIP (0.300", 7.62mm)
Supplier Device Package:8-PDIP
ALD1110EPAL is available at GangBo-ic.com, Please review product page below for detailed information, including ALD1110EPAL price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for ALD1110EPAL to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

Office Hours : Mon-Fri, 9:00-18:30(GMT+8)

[email protected]

Phone: 00852-52612101

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