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SQJ200EP-T1_GE3

SQJ200EP-T1_GE3

MOSFET 2N-CH 20V 20A/60A PPAK SO

SQJ200EP-T1_GE3

SQJ200EP-T1_GE3

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Part No :

SQJ200EP-T1_GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET 2N-CH 20V 20A/60A PPAK SO
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
11229 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jan 29 - Feb 02 2025
PDF
SQJ200EP-T1_GE3 PDF
Type Description
Series:Automotive, AEC-Q101, TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:2 N-Channel (Dual)
FET Feature:Standard
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:20A, 60A
Rds On (Max) @ Id, Vgs:8.8mOhm @ 16A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:975pF @ 10V
Power - Max:27W, 48W
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Package / Case:PowerPAK® SO-8 Dual
Supplier Device Package:PowerPAK® SO-8 Dual Asymmetric
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