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IRF7101PBF

IRF7101PBF

HEXFET POWER MOSFET

IRF7101PBF

IRF7101PBF

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Part No :

IRF7101PBF

Manufacturer
Rochester Electronics
Description
HEXFET POWER MOSFET
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
13542 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jan 25 - Jan 29 2025
PDF
IRF7101PBF PDF
Type Description
Series:HEXFET®
Package:Bulk
Part Status:Active
FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:3.5A
Rds On (Max) @ Id, Vgs:100mOhm @ 1.8A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:320pF @ 15V
Power - Max:2W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SO
IRF7101PBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRF7101PBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRF7101PBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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