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SIB900EDK-T1-GE3

SIB900EDK-T1-GE3

MOSFET 2N-CH 20V 1.5A SC-75-6

SIB900EDK-T1-GE3

SIB900EDK-T1-GE3

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Part No :

SIB900EDK-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET 2N-CH 20V 1.5A SC-75-6
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
10465 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jan 24 - Jan 28 2025
PDF
SIB900EDK-T1-GE3 PDF
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:1.5A
Rds On (Max) @ Id, Vgs:225mOhm @ 1.6A, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:1.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:-
Power - Max:3.1W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:PowerPAK® SC-75-6L Dual
Supplier Device Package:PowerPAK® SC-75-6L Dual
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