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FDMS3669S

FDMS3669S

MOSFET 2N-CH 30V 13A/18A POWER56

FDMS3669S

FDMS3669S

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Part No :

FDMS3669S

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET 2N-CH 30V 13A/18A POWER56
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
459045 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 27 - Dec 01 2024
PDF
FDMS3669S PDF
Type Description
Series:PowerTrench®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:2 N-Channel (Dual) Asymmetrical
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:13A, 18A
Rds On (Max) @ Id, Vgs:10mOhm @ 13A, 10V
Vgs(th) (Max) @ Id:2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:24nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:1605pF @ 15V
Power - Max:1W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-PowerTDFN
Supplier Device Package:Power56
FDMS3669S is available at GangBo-ic.com, Please review product page below for detailed information, including FDMS3669S price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FDMS3669S to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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