POWER FIELD-EFFECT TRANSISTOR
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Obsolete |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 5A |
Rds On (Max) @ Id, Vgs: | 49mOhm @ 5A, 10V |
Vgs(th) (Max) @ Id: | - |
Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 725pF @ 20V |
Power - Max: | 2.5W |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.173", 4.40mm Width) |
Supplier Device Package: | 8-SOP |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
CCS020M12CM2Wolfspeed - a Cree company |
MOSFET 6N-CH 1200V 29.5A MODULE |
|
UPA606T-T1-ARochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
FDS8926ARochester Electronics |
N-CHANNEL POWER MOSFET |
|
BUK7K8R7-40EXNexperia |
MOSFET 2N-CH 40V 30A 56LFPAK |
|
CSD87384MTTexas Instruments |
MOSFET 2N-CH 30V 30A 5PTAB |
|
PMDPB30XNZNexperia |
MOSFET 2N-CH 20V 6HUSON |
|
FDMB3800NSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 30V 8MLP MICROFET |
|
FDMS3664SSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 30V 13A/25A POWER56 |
|
BSL316CH6327XTSA1IR (Infineon Technologies) |
MOSFET N/P-CH 30V 1.4A/1.5A TSOP |
|
NVMFD5C470NLWFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 40V 36A S08FL |
|
CWDM305PD TR13 PBFREECentral Semiconductor |
MOSFET 2P-CH 30V 5.3A 8SOIC |
|
2SK4076-ZK-E1-AYRochester Electronics |
N-CHANNEL MOSFET |
|
DMC4029SSDQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N/P-CH 40V 7A/5.1A 8SO |