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BSC0911NDATMA1

BSC0911NDATMA1

MOSFET 2N-CH 25V 18A/30A TISON8

BSC0911NDATMA1

BSC0911NDATMA1

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Part No :

BSC0911NDATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET 2N-CH 25V 18A/30A TISON8
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
16558 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jan 24 - Jan 28 2025
PDF
BSC0911NDATMA1 PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:2 N-Channel (Dual) Asymmetrical
FET Feature:Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss):25V
Current - Continuous Drain (Id) @ 25°C:18A, 30A
Rds On (Max) @ Id, Vgs:3.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:12nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:1600pF @ 12V
Power - Max:1W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-PowerTDFN
Supplier Device Package:PG-TISON-8
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