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NTMD6N04R2G

NTMD6N04R2G

N-CHANNEL POWER MOSFET

NTMD6N04R2G

NTMD6N04R2G

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Part No :

NTMD6N04R2G

Manufacturer
Rochester Electronics
Description
N-CHANNEL POWER MOSFET
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
34980 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
PDF
NTMD6N04R2G PDF
Type Description
Series:-
Package:Bulk
Part Status:Obsolete
FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):40V
Current - Continuous Drain (Id) @ 25°C:4.6A
Rds On (Max) @ Id, Vgs:34mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:900pF @ 32V
Power - Max:1.29W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SOIC
NTMD6N04R2G is available at GangBo-ic.com, Please review product page below for detailed information, including NTMD6N04R2G price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for NTMD6N04R2G to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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