SMALL SIGNAL FIELD-EFFECT TRANSI
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Obsolete |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 540mA |
Rds On (Max) @ Id, Vgs: | 550mOhm @ 540mA, 4.5V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 2.5nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 150pF @ 16V |
Power - Max: | 250mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-563, SOT-666 |
Supplier Device Package: | SOT-563-6 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
FDMS7608SSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 30V 12A/15A POWER56 |
|
ZXMC3A16DN8TAZetex Semiconductors (Diodes Inc.) |
MOSFET N/P-CH 30V 8SOIC |
|
PMDXB600UNEZNexperia |
MOSFET 2N-CH 20V 0.6A 6DFN |
|
IPG20N06S415ATMA1Rochester Electronics |
IPG20N06S4-15- 55V-60V N-CHANNEL |
|
TC8020K6-GRoving Networks / Microchip Technology |
MOSFET 6N/6P-CH 200V 56VQFN |
|
FDMS8090Sanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 100V 10A PWR56 |
|
DMTH6010LPDQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET 2NCH 60V 13.1A POWERDI |
|
CSD86311W1723Texas Instruments |
MOSFET 2N-CH 25V 4.5A 12DSBGA |
|
EPC2108EPC |
GANFET 3 N-CH 60V/100V 9BGA |
|
FDI9406_F085Rochester Electronics |
110A, 40V, 0.0022OHM, N-CHANNEL |
|
NTE4007NTE Electronics, Inc. |
IC-CMOS DUAL COMPL. PAIR |
|
SCH1406-TL-ERochester Electronics |
N-CHANNEL MOSFET |
|
FDMC89521LSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 60V 8.2A 8POWER33 |