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SI4808DY-T1-GE3

SI4808DY-T1-GE3

MOSFET 2N-CH 30V 5.7A 8SOIC

SI4808DY-T1-GE3

SI4808DY-T1-GE3

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Part No :

SI4808DY-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET 2N-CH 30V 5.7A 8SOIC
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
278827 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
PDF
SI4808DY-T1-GE3 PDF
Type Description
Series:LITTLE FOOT®
Package:Tape & Reel (TR)
Part Status:Active
FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:5.7A
Rds On (Max) @ Id, Vgs:22mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id:800mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs:20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:-
Power - Max:1.1W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SO
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