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CP307V-2N5308-WN

CP307V-2N5308-WN

POWER TRANSISTOR NPN DIE

CP307V-2N5308-WN

CP307V-2N5308-WN

Image is for reference, please contact us to get the real picture

Part No :

CP307V-2N5308-WN

Manufacturer
Central Semiconductor
Description
POWER TRANSISTOR NPN DIE
Catalog
Transistors - Bipolar (BJT) - Single
Availability
427342 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 08 - Nov 12 2025
Type Description
Series:-
Package:Bulk
Part Status:Obsolete
Transistor Type:NPN - Darlington
Current - Collector (Ic) (Max):300 mA
Voltage - Collector Emitter Breakdown (Max):40 V
Vce Saturation (Max) @ Ib, Ic:1.4V @ 200µA, 200mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:7000 @ 2mA, 5V
Power - Max:-
Frequency - Transition:60MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:Die
Supplier Device Package:Die
CP307V-2N5308-WN is available at GangBo-ic.com, Please review product page below for detailed information, including CP307V-2N5308-WN price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for CP307V-2N5308-WN to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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