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FJB3307DTM

FJB3307DTM

POWER BIPOLAR TRANSISTOR

RN732BTTD1211B25

RN732BTTD1211B25

RES 1.21K OHM 0.1% 1/8W 1206

BE0724M1Z

BE0724M1Z

72F MM 50 LT LSZH IN/OUT

FJB3307DTM

FJB3307DTM

Image is for reference, please contact us to get the real picture

Part No :

FJB3307DTM

Manufacturer
Rochester Electronics
Description
POWER BIPOLAR TRANSISTOR
Catalog
Transistors - Bipolar (BJT) - Single
Availability
14800 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 25 - Nov 29 2024
PDF
FJB3307DTM PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
Transistor Type:NPN
Current - Collector (Ic) (Max):8 A
Voltage - Collector Emitter Breakdown (Max):400 V
Vce Saturation (Max) @ Ib, Ic:3V @ 2A, 8A
Current - Collector Cutoff (Max):-
DC Current Gain (hFE) (Min) @ Ic, Vce:5 @ 5A, 5V
Power - Max:1.72 W
Frequency - Transition:-
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:D²PAK
FJB3307DTM is available at GangBo-ic.com, Please review product page below for detailed information, including FJB3307DTM price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FJB3307DTM to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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