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MJD112TF

MJD112TF

POWER BIPOLAR TRANSISTOR

MJD112TF

MJD112TF

Image is for reference, please contact us to get the real picture

Part No :

MJD112TF

Manufacturer
Rochester Electronics
Description
POWER BIPOLAR TRANSISTOR
Catalog
Transistors - Bipolar (BJT) - Single
Availability
34000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 28 - Dec 02 2024
PDF
MJD112TF PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
Transistor Type:NPN - Darlington
Current - Collector (Ic) (Max):2 A
Voltage - Collector Emitter Breakdown (Max):100 V
Vce Saturation (Max) @ Ib, Ic:3V @ 40mA, 4A
Current - Collector Cutoff (Max):20µA
DC Current Gain (hFE) (Min) @ Ic, Vce:1000 @ 2A, 3V
Power - Max:1.75 W
Frequency - Transition:25MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:D-Pak
MJD112TF is available at GangBo-ic.com, Please review product page below for detailed information, including MJD112TF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for MJD112TF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

Office Hours : Mon-Fri, 9:00-18:30(GMT+8)

[email protected]

Phone: 00852-52612101

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