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MMBT5550LT1G

MMBT5550LT1G

SMALL SIGNAL BIPOLAR TRANSISTOR,

MMBT5550LT1G

MMBT5550LT1G

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Part No :

MMBT5550LT1G

Manufacturer
Rochester Electronics
Description
SMALL SIGNAL BIPOLAR TRANSISTOR,
Catalog
Transistors - Bipolar (BJT) - Single
Availability
90000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 01 - Dec 05 2024
PDF
MMBT5550LT1G PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
Transistor Type:NPN
Current - Collector (Ic) (Max):600 mA
Voltage - Collector Emitter Breakdown (Max):140 V
Vce Saturation (Max) @ Ib, Ic:250mV @ 5mA, 50mA
Current - Collector Cutoff (Max):100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 10mA, 5V
Power - Max:225 mW
Frequency - Transition:-
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
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