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NJVMJD117T4G

NJVMJD117T4G

POWER BIPOLAR TRANSISTOR, 2A, PN

NJVMJD117T4G

NJVMJD117T4G

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Part No :

NJVMJD117T4G

Manufacturer
Rochester Electronics
Description
POWER BIPOLAR TRANSISTOR, 2A, PN
Catalog
Transistors - Bipolar (BJT) - Single
Availability
12500 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 28 - Jan 01 2024
PDF
NJVMJD117T4G PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
Transistor Type:PNP - Darlington
Current - Collector (Ic) (Max):2 A
Voltage - Collector Emitter Breakdown (Max):100 V
Vce Saturation (Max) @ Ib, Ic:3V @ 40mA, 4A
Current - Collector Cutoff (Max):20µA
DC Current Gain (hFE) (Min) @ Ic, Vce:1000 @ 2A, 3V
Power - Max:1.75 W
Frequency - Transition:25MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
NJVMJD117T4G is available at GangBo-ic.com, Please review product page below for detailed information, including NJVMJD117T4G price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for NJVMJD117T4G to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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